Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy

Ming Chin Kuo, Kuan Cheng Chiu, Tsai Hsuai Shih, Yi Jen Lai, Chu Shou Yang, Wei-Kuo Chen, Der San Chuu, Ming Chih Lee, Wu-Ching Chou*, Syang Ywan Jeng, Yu Tai Shih, Wen Ho Lan

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-<E b>/kT)/. The impurity binding energy, <Eb>, was found to decrease as the Cd composition increases.

Original languageEnglish
Pages (from-to)5145-5150
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number8 A
DOIs
StatePublished - 1 Aug 2004

Keywords

  • Activation energy
  • Molecular beam epitaxy
  • Photoluminescence
  • ZnCdSe epilayer

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