Optical properties of two-dimensional photonic-bandgap crystals characterized by spectral ellipsometry

C. I. Hsieh, H. L. Chen*, W. C. Chao, Fu-Hsiang Ko

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

In this paper, we demonstrate a simple and non-destructive measuring method for both TE and TM bandgaps of two-dimensional (2D) silicon photonic bandgap (PBG) structures by using reflected spectral ellipsometry. Although this method measures the reflected light from samples, the transmitted signal of PBG layer can be measured by using reflecting signals. With large incident angles, planar PBG modulation effects and bandgap information can be obtained. To verify this method, we fabricated silicon arrays for 2D PBG by using electron-beam lithography. From SEM images, we can verify the geometry especially the radius of the cells, which is related to the bandgaps. With a specific set of radii and dielectric constants, we can get the band diagram with plane-wave expansion method. There are several bandgaps of both TE and TM modes, which can be used to detect multiple bandgaps by spectral ellipsometry.

Original languageEnglish
Pages (from-to)920-926
Number of pages7
JournalMicroelectronic Engineering
Volume73-74
DOIs
StatePublished - 1 Jan 2004
EventMicro and Nano Engineering 2003 - Cambridge, United Kingdom
Duration: 22 Sep 200325 Sep 2003

Keywords

  • 2D photonic bandgap crystal
  • Effective medium model
  • Plane-wave expansion method
  • Spectral ellipsometry

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