Optical properties of the ZnSe1-xTex epilayers grown by molecular beam epitaxy

C. S. Yang, D. Y. Hong, C. Y. Lin, Wu-Ching Chou*, C. S. Ro, W. Y. Uen, W. H. Lan, S. L. Tu

*Corresponding author for this work

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Abstract

ZnSe1-xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1-xTex epilayers was found to increase with the Te concentration.

Original languageEnglish
Pages (from-to)2555-2559
Number of pages5
JournalJournal of Applied Physics
Volume83
Issue number5
DOIs
StatePublished - 1 Mar 1998

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    Yang, C. S., Hong, D. Y., Lin, C. Y., Chou, W-C., Ro, C. S., Uen, W. Y., Lan, W. H., & Tu, S. L. (1998). Optical properties of the ZnSe1-xTex epilayers grown by molecular beam epitaxy. Journal of Applied Physics, 83(5), 2555-2559. https://doi.org/10.1063/1.367015