Abstract
ZnSe1-xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1-xTex epilayers was found to increase with the Te concentration.
Original language | English |
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Pages (from-to) | 2555-2559 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 83 |
Issue number | 5 |
DOIs | |
State | Published - 1 Mar 1998 |