Optical properties of the ZnSe1-xTex epilayers grown by molecular beam epitaxy

C. S. Yang; D. Y. Hong; C. Y. Lin; Wu-Ching Chou; C. S. Ro; W. Y. Uen; W. H. Lan; S. L. Tu

doi:10.1063/1.367015

Optical properties of the ZnSe_1-xTe_x epilayers grown by molecular beam epitaxy

C. S. Yang, D. Y. Hong, C. Y. Lin, Wu-Ching Chou^*, C. S. Ro, W. Y. Uen, W. H. Lan, S. L. Tu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

41 Scopus citations

Abstract

ZnSe_1-xTe_x epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe_1-xTe_x epilayers was found to increase with the Te concentration.

Original language	English
Pages (from-to)	2555-2559
Number of pages	5
Journal	Journal of Applied Physics
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.367015
State	Published - 1 Mar 1998

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Yang, C. S., Hong, D. Y., Lin, C. Y., Chou, W-C., Ro, C. S., Uen, W. Y., Lan, W. H., & Tu, S. L. (1998). Optical properties of the ZnSe_1-xTe_x epilayers grown by molecular beam epitaxy. Journal of Applied Physics, 83(5), 2555-2559. https://doi.org/10.1063/1.367015

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abstract = "ZnSe1-xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1-xTex epilayers was found to increase with the Te concentration.",

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AU - Yang, C. S.

AU - Hong, D. Y.

AU - Lin, C. Y.

AU - Chou, Wu-Ching

AU - Ro, C. S.

AU - Uen, W. Y.

AU - Lan, W. H.

AU - Tu, S. L.

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AB - ZnSe1-xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1-xTex epilayers was found to increase with the Te concentration.

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