Optical Properties of Patterned InN in Photodetection Devices

Lung Hsing Hsu, Yuh Jen Cheng, Pei-Chen Yu, Hao-Chung Kuo, Chien-Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1806-1809
Number of pages4
ISBN (Electronic)9781538685297
DOIs
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

Name2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Keywords

  • Indium compounds
  • Infrared
  • nanostructured materials
  • photodetection devices

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