Optical Properties of Patterned InN in Photodetection Devices

Lung Hsing Hsu; Yuh Jen Cheng; Pei-Chen Yu; Hao-Chung Kuo; Chien-Chung Lin

doi:10.1109/PVSC.2018.8547838

Optical Properties of Patterned InN in Photodetection Devices

Lung Hsing Hsu, Yuh Jen Cheng, Pei-Chen Yu, Hao-Chung Kuo, Chien-Chung Lin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1806-1809
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547838
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Keywords

Indium compounds
Infrared
nanostructured materials
photodetection devices

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

Access to Document

10.1109/PVSC.2018.8547838

Fingerprint Dive into the research topics of 'Optical Properties of Patterned InN in Photodetection Devices'. Together they form a unique fingerprint.

Cite this

Hsu, L. H., Cheng, Y. J., Yu, P-C., Kuo, H-C., & Lin, C-C. (2018). Optical Properties of Patterned InN in Photodetection Devices. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 1806-1809). [8547838] (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547838

Hsu, Lung Hsing ; Cheng, Yuh Jen ; Yu, Pei-Chen ; Kuo, Hao-Chung ; Lin, Chien-Chung. / Optical Properties of Patterned InN in Photodetection Devices. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1806-1809 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{9a71edfddd0d4d4dbaea76b3ab12ef4e,

title = "Optical Properties of Patterned InN in Photodetection Devices",

abstract = "InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.",

keywords = "Indium compounds, Infrared, nanostructured materials, photodetection devices",

author = "Hsu, {Lung Hsing} and Cheng, {Yuh Jen} and Pei-Chen Yu and Hao-Chung Kuo and Chien-Chung Lin",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8547838",

language = "English",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1806--1809",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

address = "United States",

note = "null ; Conference date: 10-06-2018 Through 15-06-2018",

}

Hsu, LH, Cheng, YJ, Yu, P-C , Kuo, H-C & Lin, C-C 2018, Optical Properties of Patterned InN in Photodetection Devices. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547838, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 1806-1809, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547838

Optical Properties of Patterned InN in Photodetection Devices. / Hsu, Lung Hsing; Cheng, Yuh Jen; Yu, Pei-Chen ; Kuo, Hao-Chung ; Lin, Chien-Chung.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1806-1809 8547838 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optical Properties of Patterned InN in Photodetection Devices

AU - Hsu, Lung Hsing

AU - Cheng, Yuh Jen

AU - Yu, Pei-Chen

AU - Kuo, Hao-Chung

AU - Lin, Chien-Chung

PY - 2018/11/26

Y1 - 2018/11/26

N2 - InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.

AB - InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.

KW - Indium compounds

KW - Infrared

KW - nanostructured materials

KW - photodetection devices

UR - http://www.scopus.com/inward/record.url?scp=85059887868&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547838

DO - 10.1109/PVSC.2018.8547838

M3 - Conference contribution

AN - SCOPUS:85059887868

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 1806

EP - 1809

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 10 June 2018 through 15 June 2018

ER -

Hsu LH, Cheng YJ, Yu P-C , Kuo H-C , Lin C-C. Optical Properties of Patterned InN in Photodetection Devices. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1806-1809. 8547838. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). https://doi.org/10.1109/PVSC.2018.8547838

Optical Properties of Patterned InN in Photodetection Devices

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

Other files and links

Cite this