Optical properties of InN-based photodetection devices

Lung Hsing Hsu, Chien-Chung Lin, Yi Chia Hwang, Chen Fung Su, Shih Yen Lin, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans


  • Indium compounds
  • Infrared
  • nanostructured materials
  • photodetection devices

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