Optical properties of exciton charge states in InGaAs quantum dots grown by metalorganic chemical vapor deposition

H. S. Chang*, Wen-Hao Chang, W. Y. Chen, T. P. Hsieh, J. I. Chyi, T. M. Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The impact of residual impurities on neutral and charged exciton complexes in single InGaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition were investigated. We show that the formation of a charged exciton can be controlled by using resonant excitation to the residual impurity level. This optical excitation scheme is useful for the selective generation only charged excitons in initially neutral QDs without sophisticated sample designs.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages881-882
Number of pages2
DOIs
StatePublished - 1 Dec 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period24/07/0628/07/06

Keywords

  • Microphotoluminescence
  • Photon antibunching
  • Self-assembled quantum dots
  • Single photon sources

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