Optical properties of a-plane InGaN/GaN multiple quantum wells grown on nanorod lateral overgrowth templates

Huei Min Huang*, Shih Chun Ling, Wei Wen Chan, Tien-Chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dependent photoluminescence (PL). Due to the absence of quantum-confined Stark effect, the negligible PL emission peak shift and nearly identical power index for all samples were observed. In contrast to the as-grown MQWs, the thermal activation energy and internal quantum efficiency of NRELOG MQWs exhibit 1.6-fold and 4-fold increases, respectively, which are attributed to the improvement of crystal quality by NRELOG. Furthermore, the Shockley-Read-Hall nonradiative coefficient, determined from the fits of power-dependent PL quantum efficiency, is also apparently reduced while MQWs are grown on NRELOG GaN template. The results show the feasibility to fabricate high radiative efficiency a-plane devices via NRELOG.

Original languageEnglish
Article number5892865
Pages (from-to)1101-1106
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number8
DOIs
StatePublished - Aug 2011

Keywords

  • A-plane
  • InGaN/GaN multiple quantum wells
  • internal quantum efficiency
  • nanorod lateral epitaxial overgrowth

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