Optical properties and sub-bandgap formation of nano-crystalline Si quantum dots embedded ZnO thin film

Kuang Yang Kuo*, Shu Wei Hsu, Pin Ruei Huang, Wen Ling Chuang, Chuan Cheng Liu, Po-Tsung Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

In this study, we fabricate ZnO thin films with nano-crystalline Si (nc-Si) quantum dots (QDs) using a ZnO/Si multilayer deposition structure and a post-annealing process, and the formation of high crystallinity of Si QDs embedded in the crystalline ZnO matrix is demonstrated. For optical properties, the essential features of ZnO material, high transmission in long-wavelength and high absorption in shortwavelength ranges, are preserved. We observe significantly enhanced light absorption and an unusual photoluminescence emission peak contributed from the nc-Si QDs in the middle-wavelength range. In addition, we confirm the formation of optical sub-bandgap and the obtained value is quite close to the unusual PL emission peak. We show that meaningful subbandgap can form in ZnO thin film by embedding nc-Si QDs while maintaining the advantageous properties of ZnO matrix. This newly developed composite material, nc-Si QD embedded ZnO thin films, can be useful for various electro-optical applications.

Original languageEnglish
Pages (from-to)10470-10475
Number of pages6
JournalOptics Express
Volume20
Issue number10
DOIs
StatePublished - 7 May 2012

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