Optical properties and carrier dynamics of self-assembled GaN/Al 0.11 Ga 0.89 N quantum dots

W. C. Ke*, C. P. Fu, C. C. Huang, C. S. Ku, L. Lee, C. Y. Chen, W. C. Tsai, Wei-Kuo Chen, M. C. Lee, Wu-Ching Chou, W. J. Lin, Y. C. Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

GaN quantum dots were grown on an Al 0.11 Ga 0.89 N buffer layer by using flow rate modulation epitaxy. The Stranski-Krastanov growth mode was identified by an atomic force microscopy study. The thickness of the wetting layer is about 7.2 monolayers. The temperature dependent photoluminescence studies showed that at low temperature the localization energy, which accounts for de-trapping of excitons, decreases with the reducing dot size. The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (V N ) state of the Al 0.11 Ga 0.89 N barrier layer. The activation energy decreases with reducing dot size.

Original languageEnglish
Pages (from-to)2609-2613
Number of pages5
JournalNanotechnology
Volume17
Issue number10
DOIs
StatePublished - 28 May 2006

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