Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes

Yu Shou Wang, Nai Chuan Chen*, Chun Yi Lu, Jenn-Fang Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The optical joint densities of states of three InGaN!GaN-based light-emitting diodes with different emission wavelengths (violet, blue and green) operated at various currents were investigated. The results indicate that the blueshift of the emission with increasing current is related to the variation in optical joint density of states. Thus, the blueshift is ascribed to the screening of the piezoelectric field by carriers. A tail at the low-energy end of the density of states, corresponding to localized states, was found, and the presence of these tails broadens the spectra of the devices.

Original languageEnglish
Pages (from-to)4300-4303
Number of pages4
JournalPhysica B: Condensed Matter
Volume406
Issue number22
DOIs
StatePublished - 15 Nov 2011

Keywords

  • Carrier screening
  • InGaN/GaN
  • Light-emitting diodes (LED5)
  • Localized states
  • Pietoelectric

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