Optical gain and collector current characteristics of resonant-cavity phototransistors

Chien-Chung Lin; Wayne Martin; James S. Harris; Fred Sugihwo

doi:10.1063/1.125978

Optical gain and collector current characteristics of resonant-cavity phototransistors

Chien-Chung Lin^*, Wayne Martin, James S. Harris, Fred Sugihwo

^*Corresponding author for this work

Institute of Photonic System

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

An analytic model for current gain as a function of optical input power in heterojunction bipolar phototransistors is developed. The model provides excellent agreement with the dc measurements of a resonant-cavity-enhanced heterojunction bipolar phototransistor. The model is extended to explain small-signal results.

Original language	English
Pages (from-to)	1188-1190
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	9
DOIs	https://doi.org/10.1063/1.125978
State	Published - 28 Feb 2000

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title = "Optical gain and collector current characteristics of resonant-cavity phototransistors",

abstract = "An analytic model for current gain as a function of optical input power in heterojunction bipolar phototransistors is developed. The model provides excellent agreement with the dc measurements of a resonant-cavity-enhanced heterojunction bipolar phototransistor. The model is extended to explain small-signal results.",

author = "Chien-Chung Lin and Wayne Martin and Harris, {James S.} and Fred Sugihwo",

year = "2000",

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doi = "10.1063/1.125978",

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T1 - Optical gain and collector current characteristics of resonant-cavity phototransistors

AU - Lin, Chien-Chung

AU - Martin, Wayne

AU - Harris, James S.

AU - Sugihwo, Fred

PY - 2000/2/28

Y1 - 2000/2/28

N2 - An analytic model for current gain as a function of optical input power in heterojunction bipolar phototransistors is developed. The model provides excellent agreement with the dc measurements of a resonant-cavity-enhanced heterojunction bipolar phototransistor. The model is extended to explain small-signal results.

AB - An analytic model for current gain as a function of optical input power in heterojunction bipolar phototransistors is developed. The model provides excellent agreement with the dc measurements of a resonant-cavity-enhanced heterojunction bipolar phototransistor. The model is extended to explain small-signal results.

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U2 - 10.1063/1.125978

DO - 10.1063/1.125978

M3 - Article

AN - SCOPUS:0346356053

VL - 76

SP - 1188

EP - 1190

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -

Optical gain and collector current characteristics of resonant-cavity phototransistors

Abstract

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