Optical fine structures of highly quantized InGaAs/GaAs self-assembled quantum dots

H. Y. Ramirez, C. H. Lin, C. C. Chao, Y. Hsu, W. T. You, S. Y. Huang, Y. T. Chen, H. C. Tseng, Wen-Hao Chang, Sheng-Di Lin, Shun-Jen Cheng

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18 Scopus citations

Abstract

A theoretical model for the electron-hole exchange interaction in three-dimensionally (3D) confining semiconductor nanostructures is presented to explain the observed decreasing tendency of the fine-structure splittings (FSSs) of small InGaAs/GaAs self-assembled quantum dots (QDs) with increasing the emission energies. The experimentally revealed FSS reduction is shown to be highly associated with the significant 3D spreading of electronic orbitals and reduced overlap of electron and hole wave functions in small and/or Ga-diffused QDs. The combination of quantum size and Ga-diffusion effects substantially reduces the averaged e-h exchange interaction and leads to the reduced FSSs in the regime of high emission energy.

Original languageEnglish
Article number245324
Pages (from-to)1-7
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number24
DOIs
StatePublished - 15 Jun 2010

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