Optical-constants model for semiconductors and insulators

Yung-Fu Chen*, C. M. Kwei, C. J. Tung

*Corresponding author for this work

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

The refractive index and the extinction coefficient, i.e., the real and imaginary parts of the complex index of refraction, for semiconductors and insulators are derived as a function of photon energy. These derivations apply f-sum rules and symmetry relations to critical-point transitions from the valence band to the conduction band. Comparison with measured optical data reveals that present formulations are valid over a wide range of photon energies immediately above the band gap to the first ionization threshold for inner shells. The present work shows an improvement and extension over the theory of Forouhi and Bloomer, which applies for a narrow range of photon energies above the absorption edge.

Original languageEnglish
Pages (from-to)4373-4379
Number of pages7
JournalPhysical Review B
Volume48
Issue number7
DOIs
StatePublished - 1 Jan 1993

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