Optical characterization of ZnMnO thin films on c-Al2O 3

H. J. Lin, D. Y. Lin, J. S. Wu, Wu-Ching Chou, C. S. Yang, J. S. Wang, W. H. Lo

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2 Scopus citations


Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton (D0X) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.

Original languageEnglish
Pages (from-to)98-101
Number of pages4
JournalJournal of the Korean Physical Society
Issue number1
StatePublished - 1 Jan 2008


  • Photoluminescence
  • Reflectance
  • X-ray diffraction
  • ZnMnO

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