Optical characteristics of a-plane InGa N / Ga N multiple quantum wells with different well widths

T. S. Ko*, Tien-chang Lu, T. C. Wang, M. H. Lo, J. R. Chen, R. C. Gao, Hao-Chung Kuo, S. C. Wang, J. L. Shen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


a -plane InGaNGaN multiple quantum wells of different widths ranging from 3 to 12 nm were grown on r -plane sapphire by metal organic chemical vapor deposition for investigation. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature (9 K) time-resolved PL study shows that the sample with 3-nm -thick wells has a better optical property with a fast exciton decay time of 0.57 ns. The results of cathodoluminescence and micro-PL scanning images for samples of different well widths further verify the more uniform and stronger luminescence intensity distribution observed for the samples of thinner quantum wells, indicating that the important growth parameters for a -plane InGaNGaN multiple quantum wells could be dominated by the In fluctuation and crystal quality during the epitaxial growth.

Original languageEnglish
Article number181122
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - 30 Apr 2007

Fingerprint Dive into the research topics of 'Optical characteristics of <i>a</i>-plane InGa N / Ga N multiple quantum wells with different well widths'. Together they form a unique fingerprint.

Cite this