Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain

H. Shen*, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

The effect of thermally induced in-plane uniaxial strain on the optical properties of a GaAs/AlxGa1-xAs multiple quantum well (MQW) has been studied in detail. The strain was produced by bonding the MQW thin films to LiTaO3, a transparent substrate which possesses a direction-dependent thermal expansion coefficient. At temperatures different from the bonding temperature we have observed an anisotropy in the optical properties of the MQW due to the strain-induced lowering of its in-plane fourfold rotation symmetry. The anisotropic absorption and birefringence for light incident normal to such a MQW structure have been determined and compared to a theory involving the mixing of the valence subbands.

Original languageEnglish
Pages (from-to)13933-13936
Number of pages4
JournalPhysical Review B
Volume47
Issue number20
DOIs
StatePublished - 1 Jan 1993

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