The importance of the InP insertion layer grown by gas-source molecular beam epitaxy (GSMBE) in a series of InAsxP1-x/InyGa1-yP separate confinement multiple quantum well (SC-MQW) structures was studied with the thickness of InP insertion layer varied from 0 to 3 ML. SC-MQW samples with and without InP insertion layer were evaluated by cross-sectional TEM analysis (XTEM), X-ray rocking curves and dynamic simulations, and photoluminescence (PL) measurements. Compared with uncompensated InAsP/InP strained MQWs and InAsP/InGaP SC-MQWs without InP insertion layers, much sharper and symmetric satellite peaks in double-crystal X-ray diffraction and excellent photoluminescence were obtained from SC-MQWs with the InP insertion layers.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA|
Duration: 11 May 1997 → 15 May 1997