Optical and structural characterization of InAsP/InGaP strain compensated multiple quantum wells grown by GSMBE

Hao-Chung Kuo*, S. Thomas, A. P. Curtis, Chun-Hsiung Lin, T. U. Horton, G. E. Stillman

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The importance of the InP insertion layer grown by gas-source molecular beam epitaxy (GSMBE) in a series of InAsxP1-x/InyGa1-yP separate confinement multiple quantum well (SC-MQW) structures was studied with the thickness of InP insertion layer varied from 0 to 3 ML. SC-MQW samples with and without InP insertion layer were evaluated by cross-sectional TEM analysis (XTEM), X-ray rocking curves and dynamic simulations, and photoluminescence (PL) measurements. Compared with uncompensated InAsP/InP strained MQWs and InAsP/InGaP SC-MQWs without InP insertion layers, much sharper and symmetric satellite peaks in double-crystal X-ray diffraction and excellent photoluminescence were obtained from SC-MQWs with the InP insertion layers.

Original languageEnglish
Pages (from-to)332-335
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
Duration: 11 May 199715 May 1997

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