Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator

Pei-Wen Li*, David M.T. Kuo, Wei Ming Liao, Ming J. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Germanium quantum dots embedded in a SiO2 matrix fabricated by selective oxidation of SiGe-on-insulator structure were examined by high-resolution transmission electron microscopy, cathodoluminescence spectroscopy, and spectroscopic ellipsometry. The dot size and crystallite morphology were strongly dependent on thermal oxidation conditions. Visible photoemissions from Ge dots were observed at room temperature and they exhibited pronounced blueshifts of peak energies with increasing oxidation time, which can be correlated to the change in dot size, shape, or crystalline structure transition. The extracted refractive index of Ge dots examined by spectroscopic ellipsometry is lower than that of bulk Ge, which is also correlated to the nanocrystal size effects.

Original languageEnglish
Pages (from-to)7788-7792
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number11 A
DOIs
StatePublished - 1 Nov 2004

Keywords

  • Cathodoluminescence
  • Dielectric function
  • Germanium
  • Quantum dots

Fingerprint Dive into the research topics of 'Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator'. Together they form a unique fingerprint.

Cite this