Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate

Ching Hsueh Chiu*, Chien-Chung Lin, Dongmei Deng, Hao-Chung Kuo, Kei May Lau

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.

Original languageEnglish
Title of host publicationEleventh International Conference on Solid State Lighting
DOIs
StatePublished - 17 Oct 2011
Event11th International Conference on Solid State Lighting - San Diego, CA, United States
Duration: 22 Aug 201124 Aug 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8123
ISSN (Print)0277-786X

Conference

Conference11th International Conference on Solid State Lighting
CountryUnited States
CitySan Diego, CA
Period22/08/1124/08/11

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