Optical and electrical characterizations of In-doped GaN films grown by metalorganic vapor phase epitaxy

Hao Ming Chung*, Huai Ying Huang, Yung Chung Pan, Wang Cheng Chuang, Chen Ke Shu, Wen Hsing Chen, Ming Chih Lee, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Isoelectronic In doping effects on GaN film have been studied in terms of electrical and optical properties. Our results indicate that the 15 K-photoluminescence linewidth of near-band-edge emission (I2) is reduced from 16 to 10 meV with the incorporation of In. The corresponding recombination lifetime also drops immediately to a constant value, nearly independent of measured temperature and trimethylindium reactant supply. Regarding electrical properties, the ideality factor of an n-GaN Schottky diode is improved from 1.20 to 1.06, and the deep levels at 0.149 and 0.601 eV below the conduction band can also be effectively suppressed. This work clearly demonstrates that isoelectronic In doping is an effective and simple method for improving the GaN film quality.

Original languageEnglish
Pages (from-to)195-201
Number of pages7
JournalJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume7
Issue number3
StatePublished - 1 Aug 2000

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