Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)

S. Sundar Kumar Iyer*, Xiang Lu, Jingbao Liu, Barry Linder, Chen-Ming Hu, Nathan W. Cheung, Jing Min, Zhineng Fan, Paul Chu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications.

Original languageEnglish
Pages764-767
Number of pages4
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA
Duration: 16 Jun 199621 Jun 1996

Conference

ConferenceProceedings of the 1996 11th International Conference on Ion Implantation Technology
CityAustin, TX, USA
Period16/06/9621/06/96

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