Operation of a novel device with suspended nanowire channels

Horng-Chih Lin*, Chia Hao Kuo, Guan Jang Li, Chun Jung Su, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We investigate the operation of a new device featuring a side-gate scheme and suspended poly-Si nanowire (NW) channels. The fabrication adopted a sidewall-spacer-etching technique to form the poly-Si NW channels. The NW channels were further suspended using a simple wet-etching step. An interesting hysteresis phenomenon is observed in the I-V characteristics. In addition, a steep subthreshold swing (≥60 mV/dec) is also observed in the transfer curves. A scenario is proposed to explain the operation of such a device.

Original languageEnglish
Article number5437292
Pages (from-to)384-386
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number5
DOIs
StatePublished - 1 May 2010

Keywords

  • Hysteresis
  • MOSFET
  • Nanowire (NW)
  • Poly-Si

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