OPEN CIRCUIT VOLTAGE OF HIGH INTENSITY SILICON SOLAR CELLS.

Chen-Ming Hu*, Clifford Drowley

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The open circuit voltage is derived as an explicit function of the carrier concentrations at the junction edges through the concept of the quasi-Fermi-levels. Then, the carrier concentrations, and hence the open circuit voltage is studied as a function of the solar concentration ratio. The limit of the cells with and without back confinement (back surface field), the importance of effective cooling, and the effects of band narrowing and the cell dimensions are examined. Back confinement cells have higher photovoltages and can operate at higher concentration ratios efficiently for a given cooling scheme. A relatively light 10**1**5cm** minus **3 doping is chosen for the sample cells.

Original languageEnglish
Pages (from-to)786-790
Number of pages5
JournalUnknown Journal
StatePublished - 1 Jan 1978
EventConf Rec IEEE Photovoltaic Spec Conf 13th - Washington, DC, USA
Duration: 5 Jun 19788 Jun 1978

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