One-transistor PZT/Al2O3, SBT/Al2O3 and BLT/Al2O3 stacked gate memory

M. Y. Yang, S. B. Chen, Albert Chin, C. L. Sun*, B. C. Lan, San-Yuan Chen

*Corresponding author for this work

Research output: Contribution to journalConference article

11 Scopus citations

Abstract

We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O3 (PZT), SrBi2Ta2O9 (SBT), and Bi3.75La0.25Ti3O12 (BLT)/40Å-Al2O3 gate dielectrics. The SBT/Al2O3 FeMOSFET has the largest ION/IOFF of greater than 2 orders of magnitude, and the PZT/Al2O3 FeMOSFET has the fast 10ns program/erase time, >1011 program/erase endurance, and 10 years retention.

Original languageEnglish
Pages (from-to)795-798
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

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