We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O3 (PZT), SrBi2Ta2O9 (SBT), and Bi3.75La0.25Ti3O12 (BLT)/40Å-Al2O3 gate dielectrics. The SBT/Al2O3 FeMOSFET has the largest ION/IOFF of greater than 2 orders of magnitude, and the PZT/Al2O3 FeMOSFET has the fast 10ns program/erase time, >1011 program/erase endurance, and 10 years retention.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2001|
|Event||IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States|
Duration: 2 Dec 2001 → 5 Dec 2001