One-transistor PZT/Al2O3, SBT/Al2O3 and BLT/Al2O3 stacked gate memory

M. Y. Yang; S. B. Chen; Albert Chin; C. L. Sun; B. C. Lan; San-Yuan Chen

doi:10.1109/IEDM.2001.979634

One-transistor PZT/Al₂O₃, SBT/Al₂O₃ and BLT/Al₂O₃ stacked gate memory

M. Y. Yang, S. B. Chen, Albert Chin, C. L. Sun^*, B. C. Lan, San-Yuan Chen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O₃ (PZT), SrBi₂Ta₂O₉ (SBT), and Bi_3.75La_0.25Ti₃O₁₂ (BLT)/40Å-Al₂O₃ gate dielectrics. The SBT/Al₂O₃ FeMOSFET has the largest I_ON/I_OFF of greater than 2 orders of magnitude, and the PZT/Al₂O₃ FeMOSFET has the fast 10ns program/erase time, >10¹¹ program/erase endurance, and 10 years retention.

Original language	English
Pages (from-to)	795-798
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979634
State	Published - 1 Dec 2001
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2 Dec 2001 → 5 Dec 2001

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@article{94f7985ede0e414582124c1fcab3d139,

title = "One-transistor PZT/Al2O3, SBT/Al2O3 and BLT/Al2O3 stacked gate memory",

abstract = "We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O3 (PZT), SrBi2Ta2O9 (SBT), and Bi3.75La0.25Ti3O12 (BLT)/40{\AA}-Al2O3 gate dielectrics. The SBT/Al2O3 FeMOSFET has the largest ION/IOFF of greater than 2 orders of magnitude, and the PZT/Al2O3 FeMOSFET has the fast 10ns program/erase time, >1011 program/erase endurance, and 10 years retention.",

author = "Yang, {M. Y.} and Chen, {S. B.} and Albert Chin and Sun, {C. L.} and Lan, {B. C.} and San-Yuan Chen",

year = "2001",

month = dec,

day = "1",

doi = "10.1109/IEDM.2001.979634",

language = "English",

pages = "795--798",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 02-12-2001 Through 05-12-2001",

}

TY - JOUR

T1 - One-transistor PZT/Al2O3, SBT/Al2O3 and BLT/Al2O3 stacked gate memory

AU - Yang, M. Y.

AU - Chen, S. B.

AU - Chin, Albert

AU - Sun, C. L.

AU - Lan, B. C.

AU - Chen, San-Yuan

PY - 2001/12/1

Y1 - 2001/12/1

N2 - We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O3 (PZT), SrBi2Ta2O9 (SBT), and Bi3.75La0.25Ti3O12 (BLT)/40Å-Al2O3 gate dielectrics. The SBT/Al2O3 FeMOSFET has the largest ION/IOFF of greater than 2 orders of magnitude, and the PZT/Al2O3 FeMOSFET has the fast 10ns program/erase time, >1011 program/erase endurance, and 10 years retention.

AB - We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O3 (PZT), SrBi2Ta2O9 (SBT), and Bi3.75La0.25Ti3O12 (BLT)/40Å-Al2O3 gate dielectrics. The SBT/Al2O3 FeMOSFET has the largest ION/IOFF of greater than 2 orders of magnitude, and the PZT/Al2O3 FeMOSFET has the fast 10ns program/erase time, >1011 program/erase endurance, and 10 years retention.

UR - http://www.scopus.com/inward/record.url?scp=0035716620&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979634

DO - 10.1109/IEDM.2001.979634

M3 - Conference article

AN - SCOPUS:0035716620

SP - 795

EP - 798

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 2 December 2001 through 5 December 2001

ER -

One-transistor PZT/Al₂O₃, SBT/Al₂O₃ and BLT/Al₂O₃ stacked gate memory

Abstract

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