One-step Ge/Si epitaxial growth

Hung Chi Wu, Bi Hsuan Lin, Huang Chin Chen, Po Chin Chen, Hwo Shuenn Sheu, I. Nan Lin, Hsin-Tien Chiu, Chi Young Lee*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a GexSi1-x (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO2 powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Original languageEnglish
Pages (from-to)2398-2401
Number of pages4
JournalACS Applied Materials and Interfaces
Volume3
Issue number7
DOIs
StatePublished - 27 Jul 2011

Keywords

  • germanium (Ge)
  • hemical vapor deposition (CVD)
  • ilicon (Si)
  • ne-step growth
  • pitaxial growth

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    Wu, H. C., Lin, B. H., Chen, H. C., Chen, P. C., Sheu, H. S., Lin, I. N., Chiu, H-T., & Lee, C. Y. (2011). One-step Ge/Si epitaxial growth. ACS Applied Materials and Interfaces, 3(7), 2398-2401. https://doi.org/10.1021/am200310c