One-step Ge/Si epitaxial growth

Hung Chi Wu, Bi Hsuan Lin, Huang Chin Chen, Po Chin Chen, Hwo Shuenn Sheu, I. Nan Lin, Hsin-Tien Chiu, Chi Young Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a GexSi1-x (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO2 powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Original languageEnglish
Pages (from-to)2398-2401
Number of pages4
JournalACS Applied Materials and Interfaces
Issue number7
StatePublished - 27 Jul 2011


  • germanium (Ge)
  • hemical vapor deposition (CVD)
  • ilicon (Si)
  • ne-step growth
  • pitaxial growth

Fingerprint Dive into the research topics of 'One-step Ge/Si epitaxial growth'. Together they form a unique fingerprint.

Cite this