Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a GexSi1-x (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO2 powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.
- germanium (Ge)
- hemical vapor deposition (CVD)
- ilicon (Si)
- ne-step growth
- pitaxial growth