One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

Jiun Jia Huang*, Yi Ming Tseng, Wun Cheng Luo, Chung Wei Hsu, Tuo-Hung Hou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

71 Scopus citations

Abstract

Lack of a suitable selection device to suppress sneak current has impeded the development of 4F 2 crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO 2 /Ni MIM structure with a high current density of 10 5 A/cm 2 , and a Ni/TiO 2 /Ni/HfO 2 /Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 5 Dec 20117 Dec 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period5/12/117/12/11

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