One-dimensional edge state of Bi thin film grown on Si(111)

Naoya Kawakami, Chun-Liang Lin, Maki Kawai, Ryuichi Arafune, Noriaki Takagi

Research output: Contribution to journalArticle

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Abstract

The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

Original languageEnglish
Article number031602
JournalApplied Physics Letters
Volume107
Issue number3
DOIs
StatePublished - 20 Jul 2015

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