One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Akira Nakajima, Sin Ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.

Original languageEnglish
Title of host publicationProceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages241-244
Number of pages4
ISBN (Print)9781479929177
DOIs
StatePublished - 2014
Event26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
Duration: 15 Jun 201419 Jun 2014

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
CountryUnited States
CityWaikoloa, HI
Period15/06/1419/06/14

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  • Cite this

    Nakajima, A., Nishizawa, S. I., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H., & Iwai, H. (2014). One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. In Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (pp. 241-244). [6856021] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2014.6856021