One bipolar transistor selector - One resistive random access memory device for cross bar memory array

R. Aluguri, D. Kumar, F. M. Simanjuntak, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

Original languageEnglish
Article number095118
JournalAIP Advances
Volume7
Issue number9
DOIs
StatePublished - 1 Sep 2017

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