On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Yu Chien Chiu, Chun Yen Chang, Shiang Shiou Yen, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Hu Cheng, Po Chun Chen, Po Wei Chen, Guan Lin Liou, Min Hung Lee, Chien Liu, Wu-Ching Chou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.

Original languageEnglish
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesMY71-MY75
ISBN (Electronic)9781467391368
DOIs
StatePublished - 22 Sep 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: 17 Apr 201621 Apr 2016

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2016-September
ISSN (Print)1541-7026

Conference

Conference2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period17/04/1621/04/16

Keywords

  • HfZrO
  • charge trapping
  • ferroelectric polarization
  • nonvolatile memory

Fingerprint Dive into the research topics of 'On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10<sup>12</sup>-cycling endurance'. Together they form a unique fingerprint.

Cite this