On the scaling of lanthanum oxide gate dielectric film into the subnanometer EOT range

Hei Wong, Jieqiong Zhang, Xuan Feng, Danqun Yu, Hiroshi Iwai, Kuniyuki Kakushima

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

High-k gate dielectric integration had been one of the key technological boosters for 45 nm CMOS technology and beyond. Just a couple technology nodes after adopting the hafnium-based high-k materials, the high-k scaling have already lost its momentum. It is anticipated that the EOT scaling will be in the rate less than 0.03 nm reduction/generation in coming technology nodes. Putting aside the fabrication and reliability issues for high-k integration, high-k films in a couple nanometers are facing scalability issues. For half nanometer EOT gate dielectric, the physical thickness of high-k film will be less than 4 nm, large gate leakage will be encountered again. Meanwhile, the high-k/metal gate and high-k/silicon interfaces will be the primary constraint for achieving gate dielectric film in this EOT range. This work, taking La2O3 as example, demonstrates some of these issues related to the further subnanometer EOT scaling.

Original languageEnglish
Title of host publication2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages36-39
Number of pages4
ISBN (Electronic)9781467386098
DOIs
StatePublished - 23 Mar 2016
Event2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016 - Vienna, Austria
Duration: 25 Jan 201627 Jan 2016

Publication series

Name2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

Conference

Conference2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
CountryAustria
CityVienna
Period25/01/1627/01/16

Keywords

  • high-k gate dielectric
  • interface reaction
  • La2O3
  • subnanometer EOT

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