On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

We have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs.

Original languageEnglish
Pages (from-to)364-366
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number5
DOIs
StatePublished - 1 May 2007

Keywords

  • Metal-oxide-semiconductor field effect transistors (MOSFETs)
  • Radio frequency (RF)
  • Resistance extraction
  • Silicon-on-insulator (SOI) technology

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