On the reliability issues of RF CMOS devices

Hei Wong*, Yue Fu, J. J. Liou, Yun Yue, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Although multi-finger MOS structures have demonstrated very attractive behaviors for high-frequency analog circuit applications, the shared drain and source regions for adjacent gate fingers have led to current crowding and results in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would deteriorate the MOS reliability in several aspects. Present results suggest that the common drain regions should be wider and more heavily doped in order to alleviate these effects.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages1105-1108
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period23/10/0626/10/06

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