On the prediction of geometry-dependent floating-body effect in SOI MOSFETs

Pin Su*, Wei Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This brief demonstrates that, through the perspective of body-source built-in potential lowering (Vbi), the geometry-dependent floating-body effect in state-of-the-art silicon-on-insulator (SOI) MOSFETs can be explained and predicted by the geometry dependence of threshold voltage (VT). The correlation between Vbi and VT unveiled in this brief is the underlying mechanism responsible for the coexistence of partially depleted and fully depleted devices in a single SOI chip.

Original languageEnglish
Pages (from-to)1662-1664
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number7
StatePublished - 1 Jul 2005


  • Body-source built-in potential lowering
  • Floating-body effect
  • Fully depleted (FD)
  • Partially depleted (PD)
  • Silicon-on-insulator (SOl) CMOS
  • Threshold voltage

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