On the mechanism and frequency limit of double-barrier quantum-well structures

D. S. Pan*, Chin-Chun Meng

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Two parameters are adopted to characterize the transport process in double-barrier quantum-well (DBQW) structures. It is shown that, in general, both coherent resonant tunneling and incoherent sequential tunneling processes are possible. However, for most high-frequency applications, large current densities (>104 A/cm2) are required and, therefore, the sequential process is unlikely to occur. To determine the high-frequency capability, both the adiabatic limit of the dc current-voltage curve as well as the capacitance charging time in an embedding circuit need to be considered. We confirm that the DBQW structures with barrier thickness of 20 Å or smaller can operate up to about 1 THz.

Original languageEnglish
Pages (from-to)2082-2084
Number of pages3
JournalJournal of Applied Physics
Volume61
Issue number5
DOIs
StatePublished - 1 Dec 1987

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