On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology

J. Zhao, G. P. Li, K. Y. Liao, M. R. Chin, J. Y.C. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Via forward current stress and reverse breakdown stress to intentionally change the interfacial layer properties, the 1/f noise of base current in polysilicon emitter p-n-p transistors in a C-BiCMOS technology has been investigated. The results show that the 1/f noise of base current is proportional to Ib2, and the 1/f noise from majority carrier transport through polysilicon grain boundaries is a primary source of 1/f noise.

Original languageEnglish
Title of host publication1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages306-309
Number of pages4
ISBN (Electronic)0780309782
DOIs
StatePublished - 1993
Event1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
Duration: 12 May 199314 May 1993

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
CountryTaiwan
CityTaipei
Period12/05/9314/05/93

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