On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes

Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi Hui Zhang*, Hao Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. The electron leakage arises from the unbalanced electron and hole injection efficiencies. The correlation between the efficiency droop and the electron leakage can be numerically calculated by manipulating the conduction band barrier height of the p-AlGaN electron blocking layer (p-EBL) for the proposed DUV LEDs. For the purpose of demonstrating that the efficiency droop for DUV LEDs can be experimentally decreased by reducing the electron leakage, a p+-GaN/In0.15Ga0.85N/n+-GaN tunnel junction on DUV LED is grown by using metal organic chemical vapor deposition (MOCVD) technology. The tunnel junction helps to enhance the hole injection, thus decreasing the electron leakage and the efficiency droop. Moreover, the parasitic emission in the p-type hole injection layer is no longer observed thanks to the decreased electron leakage level.

Original languageEnglish
Article number9099624
JournalIEEE Photonics Journal
Volume12
Issue number3
DOIs
StatePublished - Jun 2020

Keywords

  • Auger recombination
  • DUV LED
  • efficiency droop
  • electron leakage

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