On the hole injection for III-nitride based deep ultraviolet light-emitting diodes

Luping Li, Yonghui Zhang, Shu Xu, Wengang Bi, Zi Hui Zhang*, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

22 Scopus citations

Abstract

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

Original languageEnglish
Article number1221
JournalMaterials
Volume10
Issue number10
DOIs
StatePublished - 24 Oct 2017

Keywords

  • External quantum efficiency
  • Hole injection efficiency
  • III-nitride semiconductor
  • Internal quantum efficiency
  • Light-emitting diode
  • Multiple quantum well

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