On the enhanced impact ionization in uniaxial strained p-MOSFETs

Pin Su*, Jack J.Y. Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations


This letter reports a new mechanism for the enhanced impact-ionization rate (Isub/Id) present in short-channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (Vdsat), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, Vdsat becomes lower, resulting in the observed Vg-dependent enhancement in Isub/Id. This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.

Original languageEnglish
Pages (from-to)649-651
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 1 Jul 2007


  • Hot-carrier effect
  • Impact ionization
  • Strained-silicon
  • Substrate current

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