On the energy band of neutral-beam etched Si/Si0.7Ge0.3 nanopillars

Min-Hui Chuang, Yi-Ming Li*, Seiji Samukawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, the geometry effects on the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si0.7Ge0.3 matrix fabricated by neutral beam etching are studied. We formulate and solve the Schrodinger equation with an effective mass approach in k space. The radius, separation, and shape effects on the energy band and density of states of the explored NPs are calculated and discussed. The separation of NPs plays a crucial factor to manipulate the band structure among the aforementioned factors.

Original languageEnglish
Article numberSBBI03
Pages (from-to)1-4
Number of pages4
JournalJapanese journal of applied physics
Volume60
Issue numberSB
DOIs
StatePublished - 1 May 2021

Keywords

  • Si nanopillar
  • energy band
  • Schr&#246
  • dinger equation in k space
  • neutral beam etching
  • Si0 7Ge0 3
  • fabrication and simulation
  • density of state

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