On the doping effects for linearity improvement of InGaP/InGaAs PHEMT

Yueh Chin Lin; J. W. Chang; Edward Yi Chang; X. Y. Chang

doi:10.1109/APMC.2005.1606466

On the doping effects for linearity improvement of InGaP/InGaAs PHEMT

Yueh Chin Lin^*, J. W. Chang, Edward Yi Chang, X. Y. Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.

Original language	English
Title of host publication	APMC 2005
Subtitle of host publication	Asia-Pacific Microwave Conference Proceedings 2005
DOIs	https://doi.org/10.1109/APMC.2005.1606466
State	Published - 1 Dec 2005
Event	APMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China Duration: 4 Dec 2005 → 7 Dec 2005

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	2

Conference

Conference	APMC 2005: Asia-Pacific Microwave Conference 2005
Country	China
City	Suzhou
Period	4/12/05 → 7/12/05

Keywords

Channel doped
IM3
InGaP/InGaAs
PHEMT
Uniform doping

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10.1109/APMC.2005.1606466

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title = "On the doping effects for linearity improvement of InGaP/InGaAs PHEMT",

abstract = "In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.",

keywords = "Channel doped, IM3, InGaP/InGaAs, PHEMT, Uniform doping",

author = "Lin, {Yueh Chin} and Chang, {J. W.} and Chang, {Edward Yi} and Chang, {X. Y.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/APMC.2005.1606466",

language = "English",

isbn = "078039433X",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

booktitle = "APMC 2005",

note = "null ; Conference date: 04-12-2005 Through 07-12-2005",

}

Lin, YC, Chang, JW, Chang, EY & Chang, XY 2005, On the doping effects for linearity improvement of InGaP/InGaAs PHEMT. in APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005., 1606466, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2, APMC 2005: Asia-Pacific Microwave Conference 2005, Suzhou, China, 4/12/05. https://doi.org/10.1109/APMC.2005.1606466

On the doping effects for linearity improvement of InGaP/InGaAs PHEMT. / Lin, Yueh Chin; Chang, J. W.; Chang, Edward Yi; Chang, X. Y.

APMC 2005: Asia-Pacific Microwave Conference Proceedings 2005. 2005. 1606466 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On the doping effects for linearity improvement of InGaP/InGaAs PHEMT

AU - Lin, Yueh Chin

AU - Chang, J. W.

AU - Chang, Edward Yi

AU - Chang, X. Y.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.

AB - In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.

KW - Channel doped

KW - IM3

KW - InGaP/InGaAs

KW - PHEMT

KW - Uniform doping

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U2 - 10.1109/APMC.2005.1606466

DO - 10.1109/APMC.2005.1606466

M3 - Conference contribution

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SN - 078039433X

SN - 9780780394339

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

BT - APMC 2005

Y2 - 4 December 2005 through 7 December 2005

ER -

On the doping effects for linearity improvement of InGaP/InGaAs PHEMT

Abstract

Publication series

Conference

Keywords

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