On the doping effects for linearity improvement of InGaP/InGaAs PHEMT

Yueh Chin Lin*, J. W. Chang, Edward Yi Chang, X. Y. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.

Original languageEnglish
Title of host publicationAPMC 2005
Subtitle of host publicationAsia-Pacific Microwave Conference Proceedings 2005
DOIs
StatePublished - 1 Dec 2005
EventAPMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China
Duration: 4 Dec 20057 Dec 2005

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2

Conference

ConferenceAPMC 2005: Asia-Pacific Microwave Conference 2005
CountryChina
CitySuzhou
Period4/12/057/12/05

Keywords

  • Channel doped
  • IM3
  • InGaP/InGaAs
  • PHEMT
  • Uniform doping

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