@inproceedings{3d43e1795f8b4eb8b52fdf0ef2765819,
title = "On the doping effects for linearity improvement of InGaP/InGaAs PHEMT",
abstract = "In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.",
keywords = "Channel doped, IM3, InGaP/InGaAs, PHEMT, Uniform doping",
author = "Lin, {Yueh Chin} and Chang, {J. W.} and Chang, {Edward Yi} and Chang, {X. Y.}",
year = "2005",
month = dec,
day = "1",
doi = "10.1109/APMC.2005.1606466",
language = "English",
isbn = "078039433X",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
booktitle = "APMC 2005",
note = "null ; Conference date: 04-12-2005 Through 07-12-2005",
}