On the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes

Jianquan Kou, Sung Wen Huang Chen, Jiamang Che, Hua Shao, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, Zi Hui Zhang*, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In this paper, we model and investigate the carrier transport for the core-shell nanorod (NR) structured green light-emitting diodes (LEDs) for which the InGaN/GaN multiple quantum wells are grown on the nonpolar surface of the NR. Our results show the absence of polarization fields in the m-plane quantum wells for the core-shell NR LEDs, which manifest the flat energy band condition, the improved electron injection efficiency, and the high electron-hole wave functions overlap for the quantum wells, leading to the high radiative recombination rate and the enhanced quantum efficiency. We further find that the quantum efficiency is also affected by the vertical charge injection for the core-shell NR LEDs. The vertical charge injection is more sensitive to the doping concentration and the thickness of the p-GaN layer than of the n-GaN layer. Moreover, the increase of the NR height also leads to the nonuniform vertical charge injection.

Original languageEnglish
Article number8532136
Pages (from-to)176-182
Number of pages7
JournalIEEE Transactions on Nanotechnology
Volume18
DOIs
StatePublished - 1 Jan 2019

Keywords

  • GaN
  • charge transport
  • external quantum efficiency (EQE)
  • nanorod light-emitting diodes (NR LEDs)
  • vertical charge injection

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    Kou, J., Huang Chen, S. W., Che, J., Shao, H., Chu, C., Tian, K., Zhang, Y., Bi, W., Zhang, Z. H., & Kuo, H-C. (2019). On the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes. IEEE Transactions on Nanotechnology, 18, 176-182. [8532136]. https://doi.org/10.1109/TNANO.2018.2879817