Abstract
This letter provides a viewpoint for the characterization of state-of-the-art thin film sllicon-on-insulator (SOI) MOSFETs. Based on body - source built-in potential lowering, the degree of full depletion can be quantified. In addition to serving as a measure of the floating-body behavior of SOI devices, the concept also enables the consolidation of partial-depletion (PD) and full-depletion (FD) SOI compact models. This consolidation of compact models together with the trend of coexistence of PD/FD devices in a single chip has become one of the greatest challenges in the scaling of SOI CMOS.
Original language | English |
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Pages (from-to) | 90-92 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 24 |
Issue number | 2 |
DOIs | |
State | Published - 1 Feb 2003 |
Keywords
- Body-source built-in potential lowering
- Floating-body effect
- Impact ionization
- Silicon-film-thickness scaling
- SOI CMOS