On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events

Wen Chieh Chen, Ming-Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A new on-chip transient detection circuit which can detect electrical disturbances of system-level electrostatic discharge (ESD) is proposed. The circuit is designed with reduced physical area by utilizing dual-latched structure. With hardware/firmware co-design method, auto-recovery procedure can be activated by the detection circuit when microelectronic systems suffer system-level ESD events. The immunity level of microelectronic products against the electromagnetic interference (EMI) of ESD events can be effectively improved. The proposed on-chip transient detection circuit has been verified in a 0.18-\boldsymbol{\mu}\mathbf{m} eMos process with 1.8-V devices under system-level ESD tests.

Original languageEnglish
Title of host publication2018 IEEE Region 10 Symposium, Tensymp 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages36-39
Number of pages4
ISBN (Electronic)9781538669891
DOIs
StatePublished - 2 Jul 2018
Event2018 IEEE Region 10 Symposium, Tensymp 2018 - Sydney, Australia
Duration: 1 Jul 20186 Jul 2018

Publication series

Name2018 IEEE Region 10 Symposium, Tensymp 2018

Conference

Conference2018 IEEE Region 10 Symposium, Tensymp 2018
CountryAustralia
CitySydney
Period1/07/186/07/18

Keywords

  • Electromagnetic compatibility (EMC)
  • Electrostatic discharge (ESD)
  • System-level ESD
  • Transient detection circuit

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