On-chip spiral inductors with diffused shields using channel-stop implant

Takashi Yoshitomi*, Yasuharu Sugawara, Eiji Morifuji, Tatsuya Ohguro, Hideki Kimijima, Toyota Morimoto, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

11 Scopus citations

Abstract

We investigated the Diffused shield Under the Oxide (DUO) for the first time. DUO is an extremely shallow diffusion layer in the n-well under the field oxide. DUO can be formed by high energy implantation through the field oxide, and it can be formed by the process of the channel stop implant for MOSFETs simultaneously. Application of DUO provided a 79% improvement in Q-factor and the comparable shield effect on the n-well. This structure is one of the suitable ground shield for the spiral inductor of the rf CMOS.

Original languageEnglish
Pages (from-to)540-543
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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    Yoshitomi, T., Sugawara, Y., Morifuji, E., Ohguro, T., Kimijima, H., Morimoto, T., Momose, H. S., Katsumata, Y., & Iwai, H. (1998). On-chip spiral inductors with diffused shields using channel-stop implant. Technical Digest - International Electron Devices Meeting, 540-543. https://doi.org/10.1109/IEDM.1998.746416