On-chip high-voltage charge pump circuit in standard CMOS processes with polysilicon diodes

Ming Dou Ker*, Shih Lun Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

An on-chip high-voltage charge pump circuit realized with the polysillcon diodes in standard (bulk) CMOS process is presented in this paper. Because the polysilicon diodes are fully Isolated from the substrate, the output voltage of the charge pump circuit is not limited by the junction breakdown voltage of MOSFETs. The polysilicon diodes can be implemented in the standard CMOS processes without extra process steps. The proposed charge pump circuit has been fabricated in a 0.25-μm 2.5-V standard CMOS process. The output voltage of the 12-stage charge pump circuit can be pumped up to 28.08 V, which is much higher than the n-well/p-substrate breakdown voltage (18.9 V) in a 0.25-μm 2.5-V standard CMOS process.

Original languageEnglish
Title of host publication2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
PublisherIEEE Computer Society
Pages157-160
Number of pages4
ISBN (Print)0780391624, 9780780391628
DOIs
StatePublished - 1 Jan 2005
Event1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu, Taiwan
Duration: 1 Nov 20053 Nov 2005

Publication series

Name2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005

Conference

Conference1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
CountryTaiwan
CityHsinchu
Period1/11/053/11/05

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