On-chip ESD protection strategies for RF circuits in CMOS technology

Ming Dou Ker*, Yuan Wen Hsiao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages1680-1683
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 1 Jan 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period23/10/0626/10/06

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