On characteristic fluctuation of nonideal bulk FinFET devices

Yiming Li*, Wen Tsung Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work, for the first time, estimates the random dopant fluctuation (RDF) on DC characteristics of trapezoidal bulk FinFET devices by using an experimentally calibrated 3D quantum-mechanically corrected device simulation. For bulk FinFET devices under the same channel volume, we analyze the impact of geometry variation and RDF on the threshold voltage, the on-/off-state current with respect to different channel fin angles. The channel fin angle increases, the on-state current increases owing to increase of total fin width, but small- and large-fin-angle devices have comparable RDF. The threshold voltage is affected to different extents by RDs appearing in the upper and lower channel fin regions. Two major factors, the total fin width and the RD's position, affecting the Vth fluctuation of RDF are discussed.

Original languageEnglish
Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479950379
DOIs
StatePublished - 26 Apr 2016
EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
Duration: 28 Jul 201431 Jul 2014

Publication series

Name2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

ConferenceIEEE International Nanoelectronics Conference, INEC 2014
CountryJapan
CitySapporo
Period28/07/1431/07/14

Keywords

  • Bulk FinFET Devices
  • Modeling and Simulation
  • Nonideal Channel Fin
  • Random Dopant Fluctuation
  • Threshold Voltage Fluctuation

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  • Cite this

    Li, Y., & Huang, W. T. (2016). On characteristic fluctuation of nonideal bulk FinFET devices. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 [7460436] (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460436