Mo/Al/Ti or TiN/TiSi2 ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mechanism.
|Number of pages||6|
|State||Published - 2014|
|Event||Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States|
Duration: 11 May 2014 → 15 May 2014