Ohmic contact properties depending on AlGaN layer thickness for AlGaN/GaN high electron mobility transistor structures

Yusuke Takei, Mari Okamoto, Wataru Saito, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Mo/Al/Ti or TiN/TiSi2 ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mechanism.

Original languageEnglish
Pages (from-to)265-270
Number of pages6
JournalECS Transactions
Volume61
Issue number4
DOIs
StatePublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: 11 May 201415 May 2014

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