Observations of Al segregation around dislocations in AlGaN

Li Chang*, S. K. Lai, F. R. Chen, J. J. Kai

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations


Transmission electron microscopy has been used to observe Al segregation around the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by metalorganic chemical vapor deposition on 6H-SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of dislocations in the matrix. The Al-depleted regions around the dislocations are shown to be within a few nanometers from the dislocation lines. The results also show that more Al segregate to edge dislocations than to screw ones.

Original languageEnglish
Pages (from-to)928-930
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - 13 Aug 2001

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